供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2025-03-31
LTD Date2025-09-30
相关零件
InfineonIRF1404ZPBF
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 190A;TO-220AB;PD 220W;-55de
InfineonIRF2805PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 3.9Milliohms;ID 175A;TO-220AB;PD 330W;-55de
InfineonIRF3205ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de
描述
由其分销商提供的 Infineon IRF1405ZPBF 的描述。
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 55 V 4.9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
Trans MOSFET N-CH 55V 150A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:150A; On Resistance Rds(On):0.0049Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time82 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.78 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.9 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation230 W
Rds On Max4.9 mΩ
Resistance4.9 Ω
Rise Time110 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time48 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)55 V
Dimensions
Height19.8 mm
Length10.668 mm
Width4.826 mm