供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-10-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
相关零件
InfineonIPI80N06S207AKSA2
55V, N-Ch, 6.6 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS
STMicroelectronicsSTB80NF55L-08-1
N-Channel 55V - 0.0065Ohm - 80A - I2PAK StripFET(TM) II POWER MOSFET
InfineonIPI80N06S208AKSA2
55V, N-Ch, 8 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™, PG-TO262-3-3, RoHS
描述
由其分销商提供的 onsemi HUF75343S3 的描述。
Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-262 Rail
0.009 ohm N-CHANNEL Si POWER MOSFET TO-262AA
Power Field-Effect Transistor, 75A I(D), 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
75 A, 55 V, 0.009 OHM, N-CHANNEL
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3 nF
Max Operating Temperature175 °C
Max Power Dissipation270 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation270 W
Rds On Max9 mΩ
Rise Time75 ns
Turn-Off Delay Time32 ns
Voltage Rating (DC)55 V