供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-21
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2011-01-31
LTD Date2011-07-31
相关零件
InfineonIPI029N06NAKSA1
N-Channel 60 V 100 A 3 W Through Hole OptiMOSTM Power Transistor - PG-TO262-3
InfineonIPI70N04S406AKSA1
MOSFET N-CH 40V 70A TO262-3 / N-Channel 40 V 70A (Tc) 58W (Tc) Through Hole PG-TO262-3
描述
由其分销商提供的 Infineon IPI80N06S3-07 的描述。
MOSFET N-CH 55V 80A TO-262
Power Field-Effect Transistor, 80A I(D), 55V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
SMALL SIGNAL N-CHANNEL MOSFET
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Current Rating80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.768 nF
Max Operating Temperature175 °C
Max Power Dissipation135 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation135 W
Rds On Max6.8 mΩ
Rise Time41 ns
Turn-Off Delay Time34 ns
Voltage Rating (DC)55 V