onsemi HGTG30N60B3

Trans IGBT Chip N-CH 600V 60A 3-Pin(3+Tab) TO-247 Rail

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247

IGBT Transistors 600V N-Channel IGBT UFS Series

IGBT UFS N-CHAN 600V 60A TO-247

FAIRCHILD SEMICONDUCTOR HGTG30N60B3IGBT Single Transistor, 60 A, 1.45 V, 208 W, 600 V, TO-247, 3 Pins

Ptpigbt To247 30A 600V Rohs Compliant: Yes

60 A 600 V N-CHANNEL IGBT TO-247

TRANSISTOR, IGBT; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:1.45V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:60A; Package / Case:TO-247; Power Dissipation Max:208W; Power Dissipation Pd:208W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.45V

The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.