onsemi HGTG20N60A4

Name: onsemi HGTG20N60A4
Brand: onsemi
SKU: HGTG20N60A4

HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Farnell		HGTG20N60A4	0	1		5.345*	5.235*	5.126*	5.126*	5.126*	1h
element14 APAC		HGTG20N60A4	0	1		7.504*	5.018*	4.016*	3.700*	3.700*	5h
Win Source		WS-HGTG20N60A4	1,790	12				3.619	3.244	3.244	16h
Classic Components	4	HGTG20N60A4	9,092								2d
Worldway Electronics		HGTG20N60A4	19,979	7	Tube		2.011	1.950	1.847	1.847	1d

数据表和文档

下载 onsemi HGTG20N60A4 的数据表和制造商文档。

onsemi

Datasheet10 页6 年前

Datasheet0 页0 年前

IHS

Fairchild Semiconductor

element14 APAC

Future Electronics

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-10-22

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2021-07-29

LTD Date2022-01-29

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi HGTG20N60A4 的描述。

HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247

Future Electronics

Insulated-Gate Bipolar Transistor (IGBT); Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:70A; Collector Emitter Saturation Voltage, Vce(sat):1.8V; Power Dissipation, Pd:290W ;RoHS Compliant: Yes

Newark

The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS, welder and induction heating.

Fairchild Semiconductor

IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Alternate Case Style:SOT-249; Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Pin Format:GCE; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Power Dissipation Ptot Max:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC