由其分销商提供的 onsemi FQU2N60CTU 的描述。
Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK
Power MOSFET, N-Channel, QFET®, 600 V, 1.9 A, 4.7 Ω, IPAK
Trans MOSFET N-CH 600V 1.9A 3-Pin(3+Tab) IPAK Tube
600V 1.9A 2.5W 4.7´Î@10V950mA 4V@250Ã×A N Channel TO-251-3 MOSFETs ROHS
MOSFETs 600V N-Channel Adv Q-FET C-Series
Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-Channel 600V 1.9A IPAK
RS APAC
MOSFET, N-CH, 600V, 1.9A, 150DEG C, 44W;
2.5W(Ta),44W(Tc) 30V 4V@ 250¦ÌA 12nC@ 10 V 1N 600V 4.7¦¸@ 950mA,10V 1.9A 235pF@25V TO-251 6.8mm*2.5mm*6.3mm
POWER FIELD-EFFECT TRANSISTOR, 1
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.