备用零件
Price @ 1000
$ 0.811
$ 1.35
Stock
736,912
401,882
Authorized Distributors
4
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
900 V
900 V
Continuous Drain Current (ID)
4 A
2.1 A
Threshold Voltage
5 V
-
Rds On Max
4.2 Ω
4.25 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
47 W
43 W
Input Capacitance
960 pF
910 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-06-30
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FQPF4N90C 的描述。
Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220F
Single N-Channel 900 V 4.2 Ohm 22 nC 47 W DMOS Flange Mount Mosfet - TO-220F
Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220F Tube
Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 900V, 4A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 3.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Power
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance4.2 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance960 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation47 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation47 W
Rds On Max4.2 Ω
Rise Time50 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time40 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)900 V
Dimensions
Height19.5 mm
Length10.16 mm
Width4.7 mm