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STMicroelectronicsSTP7NK80ZFP
STP7NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 5.2 A, 800 V, 3-PIN TO-220FP
STMicroelectronicsSTP4NK60ZFP
N-channel 600 V, 1.76 Ohm, 4 A SuperMESH(TM) Power MOSFET in TO-220FP
描述
由其分销商提供的 STMicroelectronics STP5NK80ZFP 的描述。
N-channel 800 V, 1.9 Ohm, 4.3 A, Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
Trans MOSFET N-CH 800V 4.3A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 4.3A TO-220FP
STP5NK80ZFP N-CHANNEL MOSFET TRANSISTOR, 4.3 A, 800 V, 3-PIN TO-220FP
N-CHANNEL 800V-1.9 OHM-4.3A TO-220FP ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=800 V, 4.3 A, TO-220FPencapsulation, Through hole mounting, 3Pin
MOSFET, N, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.9ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
N Channel Mosfet, 800V, 4.3A, To-220Fp; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:4.3A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):1.9Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STP5NK80ZFP
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)4.3 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance2.4 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance910 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max2.4 Ω
Resistance2.4 Ω
Rise Time25 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time45 ns
Turn-On Delay Time18 ns
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm