供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-05-16
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FQPF13N50CF 的描述。
Power MOSFET, N-Channel, QFET®, FRFET®, 500 V, 13 A, 540 mΩ, TO-220F
N-Channel 500 V 0.54 Ohm Flange Mount Mosfet - TO-220F
Trans MOSFET N-CH 500V 10.5A 3-Pin(3+Tab) TO-220FP Rail
Power Field-Effect Transistor, 13A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 500V, 13A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Po
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)13 A
Current Rating13 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance540 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.055 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation48 W
Rds On Max540 mΩ
Resistance540 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)500 V