onsemi FDPF16N50

Name: onsemi FDPF16N50
Brand: onsemi
SKU: FDPF16N50

N-Channel Power MOSFET, UniFETTM, 500 V, 16 A, 380 mΩ, TO-220F

EOL

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Avnet	FDPF16N50	0	575							2d
Farnell	FDPF16N50	0	1		2.451*	2.043*	1.702*	1.702*	1.702*	1d
element14 APAC	FDPF16N50	0	1		2.678*	1.872*	1.509*	1.319*	1.319*	14h
Win Source	WS-FDPF16N50	6,932	15				2.597	2.328	2.328	2h
Worldway Electronics	FDPF16N50	27,851	7	Tube		0.321	0.311	0.295	0.295	42m

数据表和文档

下载 onsemi FDPF16N50 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Farnell

onsemi

Factory Futures

element14 APAC

库存历史记录

3 个月趋势:

-99.60%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDPF16N50 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
SnapEDA	封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-08-01

Lifecycle StatusEOL (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDPF16N50 的描述。

N-Channel Power MOSFET, UniFETTM, 500 V, 16 A, 380 mΩ, TO-220F

onsemi

Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:500V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:38.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:16A; Package / Case:TO-220F; Power Dissipation Pd:38.5W; Pulse Current Idm:64A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor