onsemi FCPF11N60

Name: onsemi FCPF11N60
Brand: onsemi
SKU: FCPF11N60

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

$ 1.557

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Distributor		SKU		Min	Pkg
Newark		FCPF11N60	612	1		5.020	4.300	2.650	2.290	2.290
Verical	5	FCPF11N60	9	9			0.663	0.663	0.663	0.663
Arrow Electronics	2	FCPF11N60	400	1		4.431	4.431	2.071	2.056	2.056
Rochester Electronics	2	FCPF11N60	11,000					1.570	1.400	1.320	26m
DigiKey		FCPF11N60-ND	67	1	Tube	4.440	4.440	2.075	1.591	1.562

数据表和文档

下载 onsemi FCPF11N60 的数据表和制造商文档。

Farnell

Datasheet0 页0 年前

Datasheet10 页22 年前

Datasheet8 页17 年前

Datasheet0 页0 年前

Upverter

IHS

Future Electronics

onsemi

库存历史记录

3 个月趋势:

-8.24%

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-01-05

Lifecycle StatusProduction (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 2 days ago)

描述

由其分销商提供的 onsemi FCPF11N60 的描述。

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F

onsemi

Single N-Channel 600 V 36 W 52 nC Silicon Through Hole Mosfet - TO-220F

Future Electronics

Power MOSFET, N Channel, 600 V, 11 A, 0.38 ohm, TO-220F, Through Hole

EBV Elektronik

Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):320mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:36W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-220F; Power Dissipation Pd:36W; Power Dissipation Pd:36W; Pulse Current Idm:30A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC

SuperFET® MOSFET is Fairchild Semiconductor’s first genera-tion of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switch-ing performance, dv/dt rate and higher avalanche energy. Con-sequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Fairchild Semiconductor

SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. Product Highlights: 650V @Tj = 150C Typ. Rds(on)=0.32W Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested

North Star Micro