onsemi FQP9N50

Name: onsemi FQP9N50
Brand: onsemi
SKU: FQP9N50

Mosfet N-ch 500V 9A TO-220

Obsolete

数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor		SKU		Min	Pkg
element14 APAC		FQP9N50	0	1		2.038*	2.038*	1.169*	0.711*	0.711*	15h
Farnell	2	FQP9N50	0	1		2.029*	2.029*	1.158*	0.708*	0.708*	1d
Win Source		WS-FQP9N50	24,000	90				0.672	0.448	0.448	3h
Worldway Electronics		FQP9N50	11,991	7	Tube		0.643	0.623	0.590	0.590	1h
Anlinkda		FQP9N50	32,129			0.439	0.393	0.357	0.345	0.339	10h

数据表和文档

下载 onsemi FQP9N50 的数据表和制造商文档。

Upverter

Technical Drawing1 页6 年前

Datasheet0 页0 年前

IHS

Farnell

Future Electronics

iiiC

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
Ultra Librarian	符号封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-12-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2011-09-14

LTD Date2012-03-14

描述

由其分销商提供的 onsemi FQP9N50 的描述。

MOSFET N-CH 500V 9A TO-220

DigiKey

Power Field-Effect Transistor, 9A I(D), 500V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.58ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes

Newark

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):730mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:9A; On State Resistance Max:730mohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC