onsemi FQP6N60C

Power MOSFET, N-Channel, QFET®, 600 V, 5.5 A, 2.0 Ω, TO-220

Trans MOSFET N-CH 600V 5.5A 3-Pin(3+Tab) TO-220AB Rail

Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

125W(Tc) 30V 4V@ 250µA 20nC@ 10 V 1individualNChannel 600V 2Ω@ 2.75A,10V 5.5A 810pF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm

MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 12

These N-Channel enhancement mode power field effect transistors are produced using Fairchild.s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.