onsemi FQP2N90

Name: onsemi FQP2N90
Brand: onsemi
SKU: FQP2N90

Power Mosfet, N-channel, Qfet®, 900 V, 2.2 A, 7.2 Ω, TO-220

$ 0.84

EOL

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Distributor		SKU		Min	Pkg
Future Electronics		FQP2N90	36	25	Tube			0.880	0.840	0.800
Verical		FQP2N90	1,358	335					0.930	0.829
Rochester Electronics		FQP2N90	1,478					0.896	0.744	0.663	23h
Flip Electronics		FQP2N90	95,000								18h
Farnell	2	FQP2N90	182	1		2.004*	1.412*	1.130*	1.130*	1.130*	23h

数据表和文档

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IHS

Datasheet8 页12 年前

Newark

Fairchild Semiconductor

onsemi

element14 APAC

库存历史记录

3 个月趋势:

-0.02%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-13

Lifecycle StatusEOL (Last Updated: 5 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FQP2N90 的描述。

Power MOSFET, N-Channel, QFET®, 900 V, 2.2 A, 7.2 Ω, TO-220

onsemi

85W(Tc) 30V 5V@ 250¦ÌA 15nC@ 10 V 1N 900V 7.2¦¸@ 1.1A,10V 2.2A 500pF@25V TO-220-3 9.4mm

UnikeyIC

Trans MOSFET N-CH 900V 2.2A 3-Pin(3+Tab) TO-220AB Rail

Avnet Japan

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:900V; On Resistance Rds(on):7.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Alternate Case Style:SOT-78B; Current Id Max:2.2A; On State Resistance Max:7.2ohm; Package / Case:TO-220; Power Dissipation Pd:85W; Power Dissipation Pd:85W; Pulse Current Idm:8.8A; Termination Type:Through Hole; Voltage Vds Typ:900V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor