onsemi FQP6N80C

Power MOSFET, N-Channel, QFET®, 800 V, 5.5 A, 2.5 Ω, TO-220

Trans MOSFET N-CH 800V 5.5A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 800V 5.5A TO-220

N-Channel 800 V 2.5 Ohm Through Hole Mosfet - TO-220

Power Field-Effect Transistor, 5.5A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.5A; Resistance, Rds On:2.1ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Current, Idm Pulse:22A; External Length / Height:4.83mm; No. of Pins:3; Power Dissipation:158W; Power, Pd:158W; Resistance, Rds on Max:2.5ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:800V; Voltage, Vgs th Max:5V; Width, External:10.67mm