Vishay IRFBG20PBF

Single N-Channel 1000 V 11 Ohms Flange Mount Power Mosfet - TO-220AB

MOSFET N-CH 1000V 1.4A TO-220AB / Trans MOSFET N-CH 1KV 1.4A 3-Pin(3+Tab) TO-220AB

Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N Channel Mosfet, 1Kv, 1.4A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:1.4A; On Resistance Rds(On):11Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

MOSFET, N, 1000V, 1.4A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):11.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:1.4A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.3°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:5.2A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V