供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-12
Lifecycle StatusEOL (Last Updated: 1 day ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)
相关零件
InfineonIRFB31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
描述
由其分销商提供的 onsemi FQP27N25 的描述。
Transistor MOSFET N Channel 250 Volt 25.5 Amp 3-Pin 3+ Tab TO-220 Rail
Power MOSFET, N-Channel, QFET®, 250 V, 25.5 A, 110 mΩ, TO-220
Trans MOSFET N-CH 250V 25.5A 3-Pin(3+Tab) TO-220AB Rail
Single N-Channel 250 V 180 W 65 nC DMOS Through Hole Mosfet - TO-220-3
250 V N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)25.5 A
Current Rating25.5 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.45 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation180 W
Rds On Max110 mΩ
Rise Time270 ns
Turn-Off Delay Time80 ns
Turn-On Delay Time32 ns
Voltage Rating (DC)250 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm