Infineon IRFB23N20DPBF

Name: Infineon IRFB23N20DPBF
Brand: Infineon
SKU: IRFB23N20DPBF

Single N-Channel 200 V 100 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3

$ 4.71

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFB23N20DPBF	0	5	Bulk		5.350	4.710	4.710	4.710	1d
Farnell		IRFB23N20DPBF	0	1		2.196*	1.691*	1.691*	1.691*	1.691*	8h
Win Source	2	WS-IRFB23N20DPBF	4,945	12				3.589	3.218	3.218	9h
Worldway Electronics	2	IRFB23N20D	17,032	7	Tube		1.219	1.182	1.119	1.119	8h
Esaler Electronic		IRFB23N20D	50			2.647	2.621	2.595	2.570	2.545	4d

数据表和文档

下载 Infineon IRFB23N20DPBF 的数据表和制造商文档。

IHS

Datasheet13 页21 年前

Datasheet12 页21 年前

Datasheet12 页26 年前

Sierra IC

RS (Formerly Allied Electronics)

iiiC

DigiKey

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装
SnapEDA	封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-04-26

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2020-10-31

LTD Date2021-04-30

描述

由其分销商提供的 Infineon IRFB23N20DPBF 的描述。

Single N-Channel 200 V 100 mOhm 57 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET(Vdss=200V, Rds(on)max=0.10ohm, Id=24A) | MOSFET N-CH 200V 24A TO-220AB

Win Source

200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 200V 24A 3-Pin(3+Tab) TO-220AB

Avnet

200V 24A 100m´Î@10V14A 170W 5.5V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

Dasenic

HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:24A; On Resistance, Rds(on):100mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon