onsemi FDP33N25

Name: onsemi FDP33N25
Brand: onsemi
SKU: FDP33N25

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

$ 1.044

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Distributor		SKU		Min	Pkg
Avnet	2	FDP33N25	763	1K					1.008	0.905	5h
Flip Electronics		FDP33N25	763								6d
Newark		FDP33N25	0	1		3.170	2.390	1.600	1.280	1.190
Onlinecomponents.com		FDP33N25	0	50	Bulk			2.030	1.100	1.010
Future Electronics		FDP33N25	0	1K	Tube				0.985	0.940

数据表和文档

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Newark

Datasheet0 页0 年前

Datasheet8 页21 年前

Datasheet0 页0 年前

Upverter

IHS

onsemi

Farnell

库存历史记录

3 个月趋势:

-63.51%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-14

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDP33N25 的描述。

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220

onsemi

Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail

Verical

N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220

Future Electronics

Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes

Newark

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC