相关零件
onsemiFQI32N12V2TU
Power Field-Effect Transistor, 32A I(D), 120V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
InfineonIPI50N10S3L16AKSA1
100V, N-Ch, 15 mΩ max, Automotive MOSFET, I2PAK, OptiMOS™-T, PG-TO262-3-3, RoHS
描述
由其分销商提供的 onsemi FQI15P12TU 的描述。
Trans MOSFET P-CH 120V 15A 3-Pin(3+Tab) I2PAK Rail
MOSFETs P-CH/120V/15A/QFET
MOSFET P-CH 120V 15A I2PAK
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Technical
Continuous Drain Current (ID)15 A
Current Rating-15 A
Drain to Source Breakdown Voltage-120 V
Drain to Source Resistance170 mΩ
Drain to Source Voltage (Vdss)120 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Operating Temperature175 °C
Max Power Dissipation3.75 W
Min Operating Temperature-55 °C
Power Dissipation3.75 W
Rds On Max200 mΩ
Rise Time100 ns
Turn-Off Delay Time80 ns
Voltage Rating (DC)-120 V