描述
由其分销商提供的 onsemi FQI5P10TU 的描述。
MOSFET P-CH 100V 4.5A I2PAK
Power Field-Effect Transistor, 4.5A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
P-CHANNEL POWER MOSFET
MOSFETs 100V P-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Current Rating-4.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.05 Ω
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation3.75 W
Rds On Max1.05 Ω
Rise Time70 ns
Turn-Off Delay Time12 ns
Voltage Rating (DC)-100 V