onsemi FQD4N25TM-WS

Name: onsemi FQD4N25TM-WS
Brand: onsemi
SKU: FQD4N25TM-WS

N-channel Power Mosfet, Qfet®, 250 V, 3 A, 1.75 Ω, Dpak

$ 0.309

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	FQD4N25TM-WS	3,653					0.327	0.272	0.242	12h
Flip Electronics	FQD4N25TM-WS	27,505								6d
Avnet	FQD4N25TM-WS	0	3334							14h
Farnell	FQD4N25TM-WS	0	2500	Tape & Reel					0.409*	1d
Mouser	512-FQD4N25TM_WS	751	1	Tape & Reel	1.220	0.756	0.495	0.347	0.289

数据表和文档

下载 onsemi FQD4N25TM-WS 的数据表和制造商文档。

IHS

Datasheet9 页4 年前

Farnell

onsemi

Future Electronics

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+0.00%

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-06-14

Lifecycle StatusObsolete (Last Updated: 3 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQD4N25TM-WS 的描述。

N-Channel Power MOSFET, QFET®, 250 V, 3 A, 1.75 Ω, DPAK

onsemi

Trans MOSFET N-CH 250V 3A 3-Pin(2+Tab) TO-252 T/R

Avnet

Qf -250V 2.1Ohm Dpak/Reel Rohs Compliant: Yes |Onsemi FQD4N25TM-WS

Newark

Power Field-Effect Transistor, 3A I(D), 250V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

POWER FIELD-EFFECT TRANSISTOR, 3

DigiKey Marketplace

2.5W(Ta),37W(Tc) 30V 5V@ 250¦ÌA 5.6nC@ 10 V 1N 250V 1.75¦¸@ 1.5A,10V 3A 200pF@25V TO-252AA 6.73mm*6.22mm*2.39mm

UnikeyIC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor