onsemi FQD5N30TM
$ 0.444
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-08
Lifecycle StatusObsolete (Last Updated: 5 months ago)
相关零件
InfineonIPD5N25S3430ATMA1
250V, N-Ch, 430 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS
描述
由其分销商提供的 onsemi FQD5N30TM 的描述。
2.5W(Ta),45W(Tc) 5V@ 250¦ÌA 13nC@ 10V 1N 300V 900m¦¸@ 2.2A,10V 430pF@25V DPAK
Trans MOSFET N-CH 300V 4.4A 3-Pin(2+Tab) DPAK T/R
MOSFET N-CH 300V 4.4A DPAK
Power Field-Effect Transistor, 4.4A I(D), 300V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
N-CHANNEL POWER MOSFET
MOSFETs 300V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)4.4 A
Current Rating4.3 A
Drain to Source Breakdown Voltage300 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)300 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance430 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage300 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max900 mΩ
Rise Time55 ns
Turn-Off Delay Time17 ns
Voltage Rating (DC)300 V