供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2008-12-02
LTD Date2009-06-02
相关零件
Diodes Inc.DMN6068LK3-13
Power MOSFET, N Channel, 60 V, 8.5 A, 68 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
描述
由其分销商提供的 onsemi FQD630TF 的描述。
Trans MOSFET N-CH 200V 7A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
2.5W(Ta)，46W(Tc) 4V@ 250µA 25nC@ 10V 1individualNChannel 200V 400mΩ@ 3.5A,10V 550pF@25V DPAK SMD mount
N-CHANNEL POWER MOSFET
MOSFETs 200V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance550 pF
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max400 mΩ
Rise Time75 ns
Turn-Off Delay Time47 ns
Voltage Rating (DC)200 V