onsemi FQD1N60CTM

Name: onsemi FQD1N60CTM
Brand: onsemi
SKU: FQD1N60CTM

N-channel Power Mosfet, Qfet®, 600 V, 1 A, 11.5 Ω, Dpak

$ 0.251

EOL

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价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	FQD1N60CTM	0					0.303	0.251	0.224	16h
element14 APAC	FQD1N60CTM	0	1		0.634*	0.501*	0.424*	0.310*	0.296*	5h
Farnell	FQD1N60CTM	0	1		0.600*	0.497*	0.436*	0.279*	0.279*	16h
Weyland Electronics Group Pte. Ltd.	FQD1N60CTM	10,000	1	Tape & Reel	3.756	3.756	3.756	3.756	3.756	17h
Win Source	WS-FQD1N60CTM	10,000	6			8.731	5.821	5.821	5.821	16h

数据表和文档

下载 onsemi FQD1N60CTM 的数据表和制造商文档。

Farnell

Datasheet9 页12 年前

Datasheet0 页0 年前

IHS

onsemi

Newark

_legacy Avnet

库存历史记录

3 个月趋势:

-100%

CAD 模型

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供应链

Lifecycle StatusEOL (Last Updated: 4 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)

描述

由其分销商提供的 onsemi FQD1N60CTM 的描述。

N-Channel Power MOSFET, QFET®, 600 V, 1 A, 11.5 Ω, DPAK

onsemi

N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - TO-252-3

Future Electronics

MOSFET, N CH, 600V, 9.3OHM, 1A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1A; Drain Source Voltage Vds:600V; On Resistance Rds(on):9.3ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:28W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

Farnell

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.