STMicroelectronics STD1NK60T4

Name: STMicroelectronics STD1NK60T4
Brand: STMicroelectronics
SKU: STD1NK60T4

Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount

$ 0.47

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet		STD1NK60T4	30,000	2500					0.343	1d
Future Electronics	2	STD1NK60T4	2,500	2500	Tape & Reel				0.265
Newark	3	STD1NK60T4	36,552	5	Cut Tape	0.934	0.603	0.393	0.393
Verical		STD1NK60T4	2,500	2500					0.372
Arrow Electronics		STD1NK60T4	2,500	2500					0.372

数据表和文档

下载 STMicroelectronics STD1NK60T4 的数据表和制造商文档。

ODG (Origin Data Global)

Datasheet19 页9 年前

Newark

Upverter

STMicroelectronics

iiiC

库存历史记录

3 个月趋势:

-19.62%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics STD1NK60T4 的描述。

Power MOSFET, N Channel, 600 V, 500 mA, 8.5 ohm, TO-252 (DPAK), Surface Mount

Avnet Silica

STD1NK60T4 N-CHANNEL MOSFET TRANSISTOR, 1 A, 600 V, 3-PIN DPAK

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V 1A DPAK

Win Source

N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package

Ciiva

Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET, N CH, 600V, 1A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dis

element14 APAC

Mosfet, N Channel, 600V, 1A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:500Ma; Tensión Drenaje-Fuente Vds:600V; Resistencia De Activación Rds(On):8Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD1NK60T4

Newark