价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQD18N20V2TM | 4,950 | 100 | |||||||||
| Future Electronics | FQD18N20V2TM | 17,500 | 2500 | Tape & Reel | ||||||||
| Master Electronics | FQD18N20V2TM | 4,968 | 50 | |||||||||
| Onlinecomponents.com | FQD18N20V2TM | 4,968 | 50 | Bulk | ||||||||
| DigiKey | FQD18N20V2TMCT-ND | 7,555 | 1 | Cut Tape |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-07-31
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FQD18N20V2TM 的描述。
N-Channel Power MOSFET, QFET®, 200 V, 15 A, 140 mΩ, DPAK
N-Channel 200 V 140 mOhm Surface Mount Mosfet - TO-252
N CHANNEL MOSFET, 200V, 15mA; Transistor; N CHANNEL MOSFET, 200V, 15mA; Transistor Polarity:N Channel; Continuous Drain Current Id:15mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):140mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)15 A
Current Rating15 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time62 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.08 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation83 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max140 mΩ
Resistance140 MΩ
Rise Time133 ns
Schedule B8541290080
Turn-Off Delay Time38 ns
Turn-On Delay Time16 ns
Voltage Rating (DC)200 V
Dimensions
Height2.517 mm
Length6.6 mm