onsemi FQD16N25CTM

Name: onsemi FQD16N25CTM
Brand: onsemi
SKU: FQD16N25CTM

N-Channel Power MOSFET, QFET®, 250 V, 16 A, 270 mΩ, DPAK

$ 0.492

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Distributor		SKU		Min	Pkg
Avnet	5	FQD16N25CTM	110,000	2500						0.471	18h
Newark	3	FQD16N25CTM	16,074	1	Cut Tape	0.382	0.382	0.382	0.382	0.382
Verical	5	FQD16N25CTM	2,500	2500						0.461
Arrow Electronics	2	FQD16N25CTM	1,855	1		0.794	0.678	0.565	0.492	0.492
Master Electronics		FQD16N25CTM	2,500	50				0.530	0.480	0.444

数据表和文档

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JRH Electronics

Datasheet0 页0 年前

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IHS

Fairchild Semiconductor

onsemi

库存历史记录

3 个月趋势:

+6.72%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-04-05

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FQD16N25CTM 的描述。

N-Channel Power MOSFET, QFET®, 250 V, 16 A, 270 mΩ, DPAK

onsemi

N-Channel 250 V 0.27 Ohm Surface Mount Mosfet - TO-252-3

Future Electronics

160W(Tc) 30V 4V@ 250¦ÌA 53.5nC@ 10 V 1N 250V 270m¦¸@ 8A,10V 16A 1.08nF@25V TO-252AA 2.52mm

UnikeyIC

N-CHANNEL MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes

Newark

Power Field-Effect Transistor, 16A I(D), 250V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N CH, 250V, 16A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor