供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-12-08
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FQD7P20TM 的描述。
P-Channel Power MOSFET, QFET®, -200 V, -5.7 A, 690 mΩ, DPAK
FQD7P20TM Series -200 V -5.7 A 690 mOhm SMT P-Channel QFET Mosfet - DPAK-3
Trans MOSFET P-CH 200V 5.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 200V 5.7A DPAK
Power MOSFET, P Channel, 200 V, 5.7 A, 0.69 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5.7mA; On Resistance, Rds(on):0.69ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5.7 A
Current13 A
Current Rating-5.7 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vdss)-200 V
Element ConfigurationSingle
Fall Time42 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance770 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation55 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max690 mΩ
Resistance690 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage-5 V
Turn-Off Delay Time30 ns
Turn-On Delay Time15 ns
Voltage150 V
Voltage Rating (DC)-200 V
Dimensions
Height2.517 mm
Length6.6 mm
Width6.1 mm