onsemi FQB5N50CFTM
$ 0.68
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-06-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
描述
由其分销商提供的 onsemi FQB5N50CFTM 的描述。
Power MOSFET, N Channel, 500 V, 5 A, 1.55 ohm, TO-263 (D2PAK), Surface Mount
Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:5A; On Resistance, Rds(on):1.55ohm; Rds(on) Test Voltage, Vgs:4V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:500V; Current, Id Cont:5A; Resistance, Rds On:1.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Capacitance, Ciss Typ:480pF; Case Style, Alternate:TO-263; Current, Idm Pulse:20A; Marking, SMD:FQB5N50CF; Pin Format:G,D,S; Power Dissipation:96W; Power, Pd:96W; Temperature, Tj Max:150°C; Time, Fall:48ns; Time, Rise:46ns; Time, trr Typ:65ns; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds Max:500V; Voltage, Vgs th Max:4V; dv/dt:4.5V/µs
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.55 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Operating Temperature150 °C
Max Power Dissipation96 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation96 W
Rds On Max1.55 Ω
Rise Time46 ns
Threshold Voltage4 V
Turn-Off Delay Time50 ns
Voltage Rating (DC)500 V