供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-22
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
相关零件
InfineonSPB04N60S5ATMA1
MOSFET N-CH 600V 4.5A TO-263 / Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
描述
由其分销商提供的 onsemi FQB6N50TM 的描述。
Trans MOSFET N-CH 500V 5.5A 3-Pin (2+Tab) D2PAK T/R
MOSFET N-CH 500V 5.5A D2PAK
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
600V N-Channel MOSFET
N-CHANNEL POWER MOSFET
MOSFETs 500V N-Channel QFET
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance790 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation98 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max1.3 Ω
Rise Time65 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)500 V
Dimensions
Height4.95 mm