供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-03
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2015-01-31
LTD Date2015-07-31
相关零件
InfineonSPB04N60S5ATMA1
MOSFET N-CH 600V 4.5A TO-263 / Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
描述
由其分销商提供的 STMicroelectronics STB6N52K3 的描述。
N-channel 525 V, 1 Ohm, 5 A, D2PAK SuperMESH3(TM) Power MOSFET
Trans MOSFET N-CH 525V 5A 3-Pin(2+Tab) D2PAK T/R
MOSFET N-CH 525V 5A D2PAK
Power Field-Effect Transistor, 5A I(D), 525V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
new, original packaged
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage525 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)525 V
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance670 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation70 W
Rds On Max1.2 Ω
Resistance1.2 Ω
Rise Time11 ns
Turn-Off Delay Time31 ns
Turn-On Delay Time10 ns