供应链
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2006-02-23
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-09-30
LTD Date2024-03-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
VishaySI1902CDL-T1-GE3
Transistor: 2xN-MOSFET; unipolar; 20V; 1.1A; 0.235ohm; 420mW; -55+150 deg.C; SMD; SC70-6
NXP SemiconductorsPMR290XN,115
MOSFET, N CH, 20V, 0.29OHM, 970mA, SOT-416-3; Transistor Polarity:N Channel; Con
描述
由其分销商提供的 onsemi FDY301NZ 的描述。
N-Channel 2.5V Specified PowerTrench® MOSFET 20V, 0.2A, 5Ω
Trans MOSFET N-CH 20V 0.2A 3-Pin SC-89 T/R
MOSFETs 20V Sgl N-Chl 2.5V Spec PwrTrch MOSFET
2.5V, SINGLE, NCH, SPECIFIED POWER TRENCH MOSFET
Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
onsemi NChannel EnhancedMOSTube PowerTrenchseries, Vds=20 V, 200 mA, SOT-523 (SC-89)encapsulation, surface mount, 3Pin
2.5V Single Nch P Rohs Compliant: Yes
SMALL SIGNAL FIELD-EFFECT TRANSI
MOSFET, N, SMD, SC89; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:200mA; Package / Case:SC-89; Power Dissipation Pd:625mW; Pulse Current Idm:1A; SMD Marking:D; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:1.5V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance60 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation446 mW
Rds On Max5 Ω
Resistance5 Ω
Rise Time8 ns
Schedule B8541210080
Threshold Voltage1.5 V
Turn-Off Delay Time8 ns
Turn-On Delay Time6 ns
Dimensions
Height780 µm
Length1.7 mm
Width980 µm