相关零件
VishaySI1034X-T1-E3
Small Signal Field-Effect Transistor, 0.18A I(D), N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FDY4001CZ 的描述。
20V Complementary N & P-Channel PowerTrench MOSFET
Small Signal Field-Effect Transistor, 0.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, SC89-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:-; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power Dissi
MOSFET, DUAL, NP, SC89-6; Transistor Type:MOSFET; Transistor Polarity:N/P; Voltage, Vds Typ:20V; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1V; Case Style:SC-89; Termination Type:SMD; Current, Id Cont N Channel:0.2A; Current, Id Cont P Channel:0.15A; Current, Idm Pulse:1A; Pin Configuration:S2(4),G2(5),D1(6),D2(3),G1(2), S1(1); Power, Pd:0.625W; Resistance, Rds on N Channel 1:5ohm; Resistance, Rds on, P Channel 2:8ohm; Typ Capacitance Ciss:100pF; Voltage, Rds Measurement:4.5V; Voltage, Vds Max:20V; Voltage, Vgs Max:8V; Voltage, Vgs th Max:1.5V; Voltage, Vgs th Min:0.6V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSC
MountSurface Mount
Number of Pins89
Number of Terminals6
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance60 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation446 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation625 mW
Rds On Max5 Ω
Rise Time13 ns
Threshold Voltage1 V
Turn-Off Delay Time16 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)20 V
Dimensions
Height700 µm