相关零件
InfineonIRF7329PBF
MOSFET, Power;Dual P-Ch;VDSS -12V;RDS(ON) 17 Milliohms;ID -9.2A;SO-8;PD 2W;-55de
InfineonIRF7410TRPBF
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V
描述
由其分销商提供的 onsemi FDS6993 的描述。
MOSFET 2P-CH 30V/12V 8SOIC
Power Field-Effect Transistor, 4.3A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P-CHANNEL POWER MOSFET
MOSFETs Dual PCh PowerTrench
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Terminals8
Technical
Continuous Drain Current (ID)4.3 A
Current Rating-4.3 A
Drain to Source Breakdown Voltage12 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)12 V
Fall Time121 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance530 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation2 W
Rds On Max55 mΩ
Rise Time20 ns
Turn-Off Delay Time134 ns