Infineon IRF7410TRPBF

Name: Infineon IRF7410TRPBF
Brand: Infineon
SKU: IRF7410TRPBF

Mosfet, Power; P-ch; Vdss -12V; Rds(on) 7 Milliohms; Id -16A; SO-8; Pd 2.5W; Vgs +/-8V

$ 0.57

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRF7410TRPBF	7,980	1		1.141	1.141	1.141	1.141	1.141
Avnet		IRF7410TRPBF	4,000	4K							2d
Rochester Electronics		IRF7410TRPBF	2,639					0.520	0.431	0.384	21h
RS (Formerly Allied Electronics)		IRF7410TRPBF	0	10	Bulk		1.230	1.090	1.090	1.090	14h
Farnell	3	IRF7410TRPBF	3,973	5	Cut Tape		2.304*	1.459*	0.699*	0.642*	20h

数据表和文档

下载 Infineon IRF7410TRPBF 的数据表和制造商文档。

Farnell

Datasheet9 页17 年前

IHS

Newark

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-2.12%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRF7410TRPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRF7410TRPBF

InfineonIRF7410GTRPBF

Price @ 1000

$ 0.57

$ 0.351

Stock

1,025,809

681,967

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

-12 V

Continuous Drain Current (ID)

16 A

Threshold Voltage

900 mV

Rds On Max

7 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

2.5 W

Input Capacitance

8.676 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-07-11

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2025-12-31

LTD Date2026-12-31

描述

由其分销商提供的 Infineon IRF7410TRPBF 的描述。

MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS +/-8V

RS (Formerly Allied Electronics)

Single P-Channel 12 V 13 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

2.5W(Ta) 8V 900mV@ 250¦ÌA 91nC@ 4.5 V 1P 12V 7m¦¸@ 16A,4.5V 16A 8.676nF@10V SOIC-8 1.75mm

UnikeyIC

Trans MOSFET P-CH 20V 16A 8-Pin SOIC T/R

Avnet

-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 16A I(D), 20V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N, 12V, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:13A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SOIC; ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon