onsemi FDS6680AS

Name: onsemi FDS6680AS
Brand: onsemi
SKU: FDS6680AS

FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8

$ 1.821

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet		FDS6680AS	4,700	360					1.821	1.738	1d
Flip Electronics		FDS6680AS	4,700								1d
Farnell	2	FDS6680AS	0	5	Cut Tape		1.275*	0.996*	0.649*	0.649*	15h
element14 APAC	2	FDS6680AS	0	1	Cut Tape	1.007*	0.797*	0.671*	0.491*	0.464*	3h
Microchip USA		FDS6680AS	214	600	Tray				1.344	1.344	2d

数据表和文档

下载 onsemi FDS6680AS 的数据表和制造商文档。

Upverter

Technical Drawing1 页6 年前

IHS

onsemi

Farnell

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDS6680AS 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
SnapEDA	封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-12-17

Lifecycle StatusObsolete (Last Updated: 5 days ago)

LTB Date2022-03-31

LTD Date2023-03-31

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FDS6680AS 的描述。

FDS6680 Series 30 V 10 mO N-Channel PowerTrench Mosfet - SOIC-8

Future Electronics

N-Channel PowerTrench® SyncFET™, 30V, 11.5A, 10.0mΩ

onsemi

MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.5mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:11.5A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The FDS6680AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDS6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDS6680 in parallel with a Schottky diode.

Fairchild Semiconductor