Infineon IRF7413ZPBF

Name: Infineon IRF7413ZPBF
Brand: Infineon
SKU: IRF7413ZPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 8 Milliohms; Id 13A; SO-8; Pd 2.5W; Vgs +/-20V

$ 0.351

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF7413ZPBF	60				0.423	0.351	0.313	3h
RS (Formerly Allied Electronics)	IRF7413ZPBF	0	3800	Bulk				0.280	20h
Farnell	IRF7413ZPBF	0	5		0.833*	0.571*	0.436*	0.365*	1d
Win Source	WS-IRF7413ZPBF	15,950	130				0.309	0.309	4h
Worldway Electronics	IRF7413ZPBF	17,253	7	Tube	0.086	0.084	0.079	0.079	3h

数据表和文档

下载 Infineon IRF7413ZPBF 的数据表和制造商文档。

IHS

Datasheet11 页18 年前

Datasheet10 页18 年前

TME

RS (Formerly Allied Electronics)

iiiC

DigiKey

库存历史记录

3 个月趋势:

+0.00%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-05-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF7413ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube

Verical

Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):10mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7413ZPBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

element14 APAC