onsemi FDS6682

Name: onsemi FDS6682
Brand: onsemi
SKU: FDS6682

N-Channel 30 V 7.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

$ 0.411

EOL

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价格与库存

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Distributor		SKU		Min	Pkg
Verical	3	FDS6682	3,500	759					0.456	0.407
Rochester Electronics		FDS6682	8,632					0.440	0.365	0.325	3h
Farnell	2	FDS6682	0	1	Cut Tape	0.936*	0.798*	0.557*	0.311*	0.278*	1d
element14 APAC	2	FDS6682	0	1	Cut Tape	0.932*	0.798*	0.553*	0.308*	0.276*	16h
Component Stockers USA		FDS6682	10,302			0.390	0.390	0.370	0.330	0.330	17h

数据表和文档

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Upverter

Technical Drawing1 页6 年前

IHS

element14 APAC

Future Electronics

onsemi

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-09-10

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDS6682 的描述。

N-Channel 30 V 7.5 mOhm Surface Mount PowerTrench Mosfet - SOIC-8

Future Electronics

N-Channel PowerTrench® MOSFET, 30V, 14A, 7.5mΩ

onsemi

MOSFET N-CH 30V 14A 8SOIC / Trans MOSFET N-CH 30V 14A 8-Pin SOIC T/R

Win Source

30V N-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, SMD, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.5mW; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5mW; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Fairchild Semiconductor