onsemi FDS6680

Name: onsemi FDS6680
Brand: onsemi
SKU: FDS6680

Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET | MOSFET N-CH 30V 11.5A 8-SOIC

$ 1.046

Obsolete

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价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		FDS6680	57,204					1.120	0.930	0.829	22h
Verical	4	FDS6680	6,832	268					1.162	1.036
Avnet		FDS6680	0	2500							1d
Farnell	3	FDS6680..	0	1		1.319*	1.319*	0.821*	0.525*	0.525*	22h
element14 APAC	2	FDS6680	0	1	Cut Tape	2.365*	2.365*	1.911*	1.222*	1.222*	11h

数据表和文档

下载 onsemi FDS6680 的数据表和制造商文档。

IHS

Datasheet5 页0 年前

Datasheet0 页0 年前

Fairchild Semiconductor

Future Electronics

Farnell

iiiC

库存历史记录

3 个月趋势:

+0.00%

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来源	eCAD	mCAD	文件
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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-04-01

Lifecycle StatusObsolete (Last Updated: 1 month ago)

描述

由其分销商提供的 onsemi FDS6680 的描述。

Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET | MOSFET N-CH 30V 11.5A 8-SOIC

Win Source

Trans MOSFET N-CH 30V 11.5A 8-Pin SOIC T/R

Verical

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:11.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:11.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS 6680; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:3V

element14 APAC

MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:11.5A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.7V; Case Style:SOIC; Termination ;RoHS Compliant: Yes

Newark

These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The MOSFET feature faster switching and lower gate charge than other MOSFET with comparable RDS(on) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Fairchild Semiconductor