供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRF7488PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7495PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
VishaySI7850DP-T1-E3
Trans MOSFET N-CH 60V 6.2A 8-Pin PowerPAK SO T/R - Cut TR (SOS) (Alt: SI7850DP-T1-E3/BKN)
描述
由其分销商提供的 onsemi FDS3590 的描述。
N-Channel PowerTrench® MOSFET, 80V, 6.5A, 39mΩ
MOSFET N-Channel 80V 6.5A 39mΩ@6.5A,10V 2.5W(Ta) 4V@250µA 35nC@10V 1.18nF@40V SOIC-8 SMD 4.9mm × 3.9mm × 1.75mm
Trans MOSFET N-CH 80V 6.5A 8-Pin SOIC T/R
MOSFET, N-CH, 80V, 6.5A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.5A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
Small Signal Field-Effect Transistor, 6.5A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Fet 80V 39.0 Mohm So8 Rohs Compliant: Yes
SO8, NCH, 80V, 600A GATEOX, 39/44MO(10/6V), TRENCH
SMALL SIGNAL FIELD-EFFECT TRANSI
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)6.5 A
Current Rating6.5 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance37 mΩ
Drain to Source Voltage (Vdss)80 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.18 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max39 mΩ
Resistance39 MΩ
Rise Time8 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)80 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm