Infineon IRF7488PBF

Name: Infineon IRF7488PBF
Brand: Infineon
SKU: IRF7488PBF

Mosfet, Power; N-ch; Vdss 80V; Rds(on) 24 Milliohms; Id 6.3A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

制造商页面数据表

价格与库存

授权分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7488PBF	0	4K	Bulk					0.450	15h
Farnell	IRF7488PBF	0	1		1.292*	1.292*	0.822*	0.748*	0.748*	9h
Component Stockers USA	IRF7488PBF	217			99.990	99.990	99.990	99.990	99.990	1d
Win Source	WS-IRF7488PBF	3,030	22				1.846	1.549	1.549	19m
Worldway Electronics	IRF7488PBF	8,916	7	Tube		0.132	0.128	0.122	0.122	23h

数据表和文档

下载 Infineon IRF7488PBF 的数据表和制造商文档。

IHS

Datasheet10 页21 年前

Datasheet9 页21 年前

element14

RS (Formerly Allied Electronics)

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-09-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2016-11-16

LTD Date2017-05-16

描述

由其分销商提供的 Infineon IRF7488PBF 的描述。

MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 24 Milliohms;ID 6.3A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 6.3A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.3A; External Length / Height:1.75mm; External Width:4.05mm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Row Pitch:6.3mm; SMD Marking:F7488; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC