供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2007-10-09
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRFI4229PBF
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
InfineonIRFI4227PBF
200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB FullPak package
描述
由其分销商提供的 onsemi FDPF2710T 的描述。
N-Channel PowerTrench® MOSFET 250V, 25A, 42.5mΩ
Power Field-Effect Transistor, 25A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
MOSFET, N CH, 250V, 25A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.0363ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.9V; Power Dissipation Pd:62.5W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)25 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance42.5 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time154 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.28 nF
Max Operating Temperature150 °C
Max Power Dissipation62.5 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs3.9 V
Number of Elements1
PackagingBulk
Power Dissipation62.5 W
Rds On Max42.5 mΩ
Resistance42.5 MΩ
Rise Time252 ns
Threshold Voltage3.9 V
Turn-Off Delay Time112 ns
Turn-On Delay Time80 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm