onsemi FDPF12N60NZ

Name: onsemi FDPF12N60NZ
Brand: onsemi
SKU: FDPF12N60NZ

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

$ 1.091

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Distributor		SKU		Min
Avnet		FDPF12N60NZ	6,000	50			1.123	1.009	1.009	10h
Newark	2	FDPF12N60NZ	2,164	1	3.200	2.160	1.890	1.770	1.770
Verical	2	FDPF12N60NZ	1,000	50			1.718	1.200	1.200
Arrow Electronics		FDPF12N60NZ	3	1	1.431	1.431	1.431	1.431	1.431
Master Electronics		FDPF12N60NZ	2,000	50			1.460	1.015	0.971

数据表和文档

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Upverter

Technical Drawing1 页5 年前

Newark

IHS

Master Electronics

onsemi

库存历史记录

3 个月趋势:

-25.76%

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onsemiFDPF12N60NZ

onsemiFQPF12N60C

Price @ 1000

$ 1.091

$ 1.238

Stock

300,170

125,370

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

12 A

Threshold Voltage

4 V

Rds On Max

650 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

39 W

51 W

Input Capacitance

1.676 nF

2.29 nF

供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDPF12N60NZ 的描述。

N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F

onsemi

FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F

Future Electronics

Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes

Newark

UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor