供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-02-28
Lifecycle StatusEOL (Last Updated: 2 years ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 years ago)
相关零件
STMicroelectronicsSTP32NM50N
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package
描述
由其分销商提供的 onsemi FDP26N40 的描述。
N-Channel Power MOSFET, UniFETTM, 400V, 26A, 160mΩ, TO-220
Trans MOSFET N-CH 400V 26A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 400 V 160 mOhm Flange Mount Mosfet - TO-220
400 V, 26 A, 0.16 OHM N-CHANNEL MOSFET Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 400V, 26A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:26A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:265W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.185 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation265 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation265 W
Rds On Max160 mΩ
Resistance160 MΩ
Rise Time100 ns
Schedule B8541290080
Turn-Off Delay Time115 ns
Turn-On Delay Time45 ns
Dimensions
Height16.51 mm
Length10.1 mm
Width4.7 mm