供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-07-31
Lifecycle StatusProduction (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 days ago)
相关零件
InfineonIPT012N08N5ATMA1
Trans MOSFET N-CH 80V 300A Automotive 9-Pin(8+Tab) HSOF T/R / N-channel, normal level
InfineonIPB180N06S4H1ATMA2
60V, N-Ch, 1.7 mΩ max, Automotive MOSFET, D2PAK 7pin, OptiMOS™-T2, PG-TO263-7, RoHS
描述
由其分销商提供的 onsemi FDMT80080DC 的描述。
N-Channel PowerTrench® MOSFET, Dual CoolTM 88, 80V, 254A, 1.35mΩ
3.2W(Ta)，156W(Tc) 30V 1.5V 273nC@ 10V 2individualPChannel 30V 35mΩ@ 10V,48mΩ@ 4.5V 7A 20.72nF@40V DUALCOOL-88-8，PQFN-8，TO-220，TO-3P-3L SMD mount 8mm*8mm*950μm
MOSFET, N CH, 80V, 254A, DUAL COOL 88; Transistor Polarity:N Channel; Continuous Drain Current Id:254A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.00106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals3
Weight248.52072 mg
Technical
Continuous Drain Current (ID)254 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.35 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance20.72 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.2 W
Rds On Max1.35 mΩ
Schedule B8541290080
Turn-Off Delay Time75 ns
Turn-On Delay Time67 ns
Dimensions
Height950 µm