供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2016-03-11
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi FDB0190N807L 的描述。
N-Channel PowerTrench® MOSFET 80V, 270A, 1.7mΩ
FDB0190 Series 80 V 270 A 1.7 mOhm N-Channel PowerTrench Mosfet - D²PAK-7
Power Field-Effect Transistor, 270A I(D), 80V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
3.8W(Ta)，250W(Tc) 20V 4V@ 250µA 249nC@ 10 V 1individualNChannel 80V 1.7mΩ@ 34A,10V 270A 19.11nF@40V TO-263-7 SMD mount 10.2mm*9.4mm*4.7mm
MOSFET, N-CH, 80V, 270A, 175DEG C, 250W; Transistor Polarity: N Channel; Drain Source Voltage Vds: 80V; Continuous Drain Current Id: 270A; On Resistance Rds(on): 0.0013ohm; Transistor Mounting: Surface Mount; Rds(on) Test Voltage Vgs: 10V
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-7
MountSurface Mount
Number of Pins7
Number of Terminals6
Weight1.312 g
Technical
Continuous Drain Current (ID)270 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance1.7 mΩ
Drain to Source Voltage (Vds)80 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance19.11 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation250 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.8 W
Rds On Max1.7 mΩ
Schedule B8541290080
Threshold Voltage2.9 V
Turn-Off Delay Time98 ns
Turn-On Delay Time60 ns
Dimensions
Height4.9 mm