供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-09-09
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2012-08-27
LTD Date2013-02-27
相关零件
VishaySIR470DP-T1-GE3
Single N-Channel 40 V 0.0023 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8
VishaySIR414DP-T1-GE3
MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous D
InfineonIRFR7446TRPBF
MOSFET N-CH 40V 56A DPAK N-Channel 40 V 56A (Tc) 98W (Tc) Surface Mount TO-252AA (DPAK)
InfineonIRFR7446PBF
MOSFET N-CH 40V 56A TO252 N-Channel 40 V 56A (Tc) 98W (Tc) Surface Mount TO-252AA (DPAK)
InfineonBSZ028N04LSATMA1
N-Ch MOSFET 63W 40V 20V 1.2V 45nC 2.2mΩ 40A TSDSON-8 SMD, Adhesive Mount 3.3mm × 3.3mm × 1.1mm
描述
由其分销商提供的 onsemi FDMS8848NZ 的描述。
Trans MOSFET N-CH Si 40V 22.8A 8-Pin Power 56 T/R
2.5W(Ta)，104W(Tc) 3V@ 250µA 152nC@ 10V 1individualNChannel 40V 3.1mΩ@ 22.8A,10V 8.075pF@20V 8PQFN SMD mount
MOSFET N-CH 40V 22.8A/49A 8PQFN
Power Field-Effect Transistor, 22.8A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
The FDMS8848NZ has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight90 mg
Technical
Continuous Drain Current (ID)22.8 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.1 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.075 nF
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.1 mΩ
Rise Time19 ns
Turn-Off Delay Time63 ns