onsemi FDMS86300

Name: onsemi FDMS86300
Brand: onsemi
SKU: FDMS86300

Trans Mosfet N-ch Si 80V 19A 8-PIN Pqfn Ep T/r / Mosfet N-ch 80V 19A POWER56

$ 1.227

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制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Avnet	2	FDMS86300	75,232	3K						1.081	2d
Verical		FDMS86300	129	6			1.101	1.091	1.091	1.091
Arrow Electronics		FDMS86300	129	1		1.106	1.101	1.091	1.091	1.091
Future Electronics		FDMS86300	9,000	3K	Tape & Reel					1.780
DigiKey	2	FDMS86300CT-ND	2,126	1	Cut Tape	3.420	2.226	1.544	1.224	1.224

数据表和文档

下载 onsemi FDMS86300 的数据表和制造商文档。

IHS

Datasheet0 页0 年前

Master Electronics

onsemi

Fairchild Semiconductor

Newark

库存历史记录

3 个月趋势:

-1.50%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-08-19

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMS86300 的描述。

Trans MOSFET N-CH Si 80V 19A 8-Pin PQFN EP T/R / MOSFET N-CH 80V 19A POWER56

Win Source

Single N-Channel 80 V 5.8 mOhm 86 nC 104 W PowerTrench SMT Mosfet - POWER 56-8

Future Electronics

Power MOSFET, N Channel, 80 V, 42 A, 0.0032 ohm, Power 56, Surface Mount

Avnet

N-Channel PowerTrench® MOSFET 80V, 122A, 3.9mΩ

onsemi

Power Field-Effect Transistor, 122A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

IHS

MOSFET, N CH, 150V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.4V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C

element14 APAC

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

Fairchild Semiconductor