Infineon IRFR3518PBF

Name: Infineon IRFR3518PBF
Brand: Infineon
SKU: IRFR3518PBF

80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

$ 1.83

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR3518PBF	0	5	Bulk		2.040	1.830	1.830	1.830	15h
Farnell	IRFR3518PBF	0	5			1.294*	0.998*	0.616*	0.603*	21h
Win Source	WS-IRFR3518PBF	10,005	20				2.299	1.928	1.928	23h
Worldway Electronics	IRFR3518PBF	18,817	7	Tube		0.623	0.604	0.572	0.572	22h
SHENGYU ELECTRONICS	IRFR3518PBF	12,807	1		0.306	0.300	0.290	0.280	0.270	4d

数据表和文档

下载 Infineon IRFR3518PBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

Datasheet12 页21 年前

element14 APAC

iiiC

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-09-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRFR3518PBF 的描述。

80V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 80V, 30A, D-PAK; Trans; Transistor Polarity:N Channel; Continuous Drain Current Id:38A; Drain Source Voltage Vds:80V; On Resistance Rds(on):29mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:150A; SMD Marking:IRFR3518; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC